Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is an oxide of a metal or copper sulfide
Reexamination Certificate
2009-04-17
2011-10-11
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Semiconductor is an oxide of a metal or copper sulfide
C257S392000, C257SE27061, C257SE29273
Reexamination Certificate
active
08035101
ABSTRACT:
A transistor, a semiconductor device including the transistor and methods of manufacturing the same are provided, the transistor including a threshold voltage adjusting layer contacting a channel layer. A source electrode and a drain electrode contacting may be formed opposing ends of the channel layer. A gate electrode separated from the channel layer may be formed. A gate insulating layer may be formed between the channel layer and the gate electrode.
REFERENCES:
patent: 5808595 (1998-09-01), Kubota et al.
patent: 2005/0017302 (2005-01-01), Hoffman
patent: 2006/0284172 (2006-12-01), Ishii
patent: 2007/0090351 (2007-04-01), Park et al.
Hong Ki-ha
Park Sung-ho
Song I-hun
Harness & Dickey & Pierce P.L.C.
Mandala Victor A
Samsung Electronics Co,. Ltd.
Stowe Scott
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