Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-04-11
2006-04-11
Dang, Trung (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S164000, C438S283000, C438S525000
Reexamination Certificate
active
07026199
ABSTRACT:
Transistor of semiconductor device and method for manufacturing the same are disclosed. The transistor comprises a channel region formed on a sidewall of a silicon fin extruding above a device isolation region. The silicon fin serves as an active region and is shorter in length so as to be spaced apart from an adjacent gate electrode. The width of the channel region is determined by the height of the silicon fin. The source/drain region of the transistor is disposed at an upper surface and the sidewall of the silicon fin to increase the contact region.
REFERENCES:
patent: 6867450 (2005-03-01), Kito et al.
patent: 2005/0019993 (2005-01-01), Lee et al.
Digh Hisamoto et al., “FinFET-A Self-Aligned Double-Gate MOSFET Scalable to 20 nm”, IEEE Transactions on Electron Devices, Dec. 2000, pp. 2320-2325, vol. 47, No. 12.
Dang Trung
Heller Ehrman LLP
Hynix / Semiconductor Inc.
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