Transistor, method of fabricating the same and organic light...

Details Transistor, method of fabricating the same and organic light... Transistor, method of fabricating the same and organic light...

2010-02-17

2011-11-15

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S099000, C438S149000, C438S455000, C257S079000, C257S059000, C257S207000, C257SE21212, C257SE21213

Reexamination Certificate

active

08058094

ABSTRACT:
A transistor includes; at least two polycrystalline silicon layers disposed substantially parallel to each other, each polycrystalline silicon layer including a channel region and at least two high conductivity regions disposed at opposing sides of the channel region; a gate which corresponds to the channel region of the two polycrystalline silicon layers and which crosses the two polycrystalline silicon layers, and a gate insulating layer interposed between the gate and the two polycrystalline silicon layers, wherein low conductivity regions are disposed adjacent to one edge of the gate and are formed between the channel region and one high conductivity region of each polycrystalline silicon layer.

REFERENCES:
patent: 2006/0102067 (2006-05-01), Noguchi et al.
patent: 2006/0145158 (2006-07-01), Noguchi et al.
patent: 2006/0267017 (2006-11-01), Noguchi et al.
patent: 2006/0270097 (2006-11-01), Kim et al.
patent: 2002-156923 (2002-05-01), None
“Comparison of Different Techniques for Passivation of Small-Grain Polycrystalline-Si MOSFET's”; Authors: M. Rodder, et al., IEEE Electron Device Letters, vol. EDL-6, No. 11 (Nov. 1985).
“Anomalous Leakage Current in LPCVD Polysilicon MOSFET's”; Authors: Jerry G. Fossum, et al., IEEE Trans. Electron Devices, vol. ED-32, No. 9, pp. 1878-1884, ( Sep. 1985).

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