Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-03-27
2007-03-27
Le, Thao P. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S384000, C257S412000, C257S411000, C257S410000
Reexamination Certificate
active
10479300
ABSTRACT:
The invention relates to a method for the selective silicidation of contact areas that allow the production of highly integrated circuits, preferably in a SMOS or BiCMOS process. To this end, a metal oxide layer (14) that contains for example praseodymium oxide is deposited onto a prepared wafer (12). A silicon layer (16) and on top of said silicon layer a cover layer (18) is deposited onto the metal oxide layer (14), said cover layer being laterally structured. In a subsequent tempering step in an oxygen-free, reducing gas atmosphere the silicon layer (16) and the metal oxide layer (14) are converted to a metal silicide layer in lateral sections (20, 22) in which the cover layer (18) was previously removed.
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Goryachko Andriy
Krüger, legal representative Elena
Kurps Rainer
Liu Jing Ping
Osten Hans-Jörg
IHP GmbH Innovations for High Performance Microelectronics/ Inst
Le Thao P.
Ware Fressola Van Der Sluys & Adolphson LLP
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