Static information storage and retrieval – Associative memories – Ferroelectric cell
Reexamination Certificate
2008-04-15
2008-04-15
Phung, Anh (Department: 2824)
Static information storage and retrieval
Associative memories
Ferroelectric cell
C365S104000, C257S296000
Reexamination Certificate
active
07359226
ABSTRACT:
A substrate forming an array of vertical transistor cells for selecting one of a plurality of memory cells and wherein each memory cell couples a transistor to a bit line via a memory element and is addressable by selecting two word lines and a bit line is disclosed. For minimizing the area of a cell and reducing complexity in production, one word line trench takes one word line, wherein in a first embodiment a first word line in a first word line trench forms a plurality of gate electrodes on one sidewall of active areas of a first and a second, adjacent row of transistor cells in word line direction, and wherein a second word line in an adjacent word line trench forms a plurality of gate electrodes on the opposite sidewall of active areas of the second and of a third row of transistor cells in wordline direction.
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Dicke Billig & Czaja, PLLC
Nguyen Hien
Phung Anh
Qimonda AG
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