Programmable resistance memory element and method for making...

Details Programmable resistance memory element and method for making... Programmable resistance memory element and method for making...

2008-04-29

2008-04-29

Pham, Thanhha S. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257S004000, C257SE31029, C365S033000, C365S100000

Reexamination Certificate

active

07365354

ABSTRACT:
A programmable resistance memory element using a conductive sidewall layer as the bottom electrode. The programmable resistance memory material deposited over the top edge of the bottom electrode, in a slot-like opening of a dielectric material. A method of making the opening.

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patent: 6972428 (2005-12-01), Maimon
patent: 2002/0182835 (2002-12-01), Quinn

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