Transistor manufacturing method, electrooptical apparatus...

Details Transistor manufacturing method, electrooptical apparatus... Transistor manufacturing method, electrooptical apparatus...

2006-05-30

2006-05-30

Wilson, Christian D. (Department: 2891)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from liquid combined with subsequent diverse...

C438S151000, C438S499000

Reexamination Certificate

active

07052980

ABSTRACT:
A method for manufacturing a transistor, includes the steps of preparing a substrate, preparing a liquid material containing a silane compound, the silane compound forming a high order silane when photopolymerized, coating the liquid material on the substrate so as to form a coating film, exposing the coating film to an atmosphere comprising at least one of oxygen and ozone so as to oxidize a surface of the coating film, and performing at least one of thermal processing and photoirradiation processing on the coating film in an inert atmosphere so as to transform the coating film into a silicon layer and a silicon oxide layer disposed on the silicon layer.

REFERENCES:
patent: 6235563 (2001-05-01), Oka et al.
patent: 6514801 (2003-02-01), Yudasaka et al.
patent: 6518087 (2003-02-01), Furusawa et al.
patent: 6767775 (2004-07-01), Yudasaka et al.
patent: 6846513 (2005-01-01), Furusawa et al.
patent: A-2001-179167 (2001-07-01), None
patent: A-2002-203794 (2002-07-01), None

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