Transistor manufacture

Details Transistor manufacture Transistor manufacture

2005-01-21

2009-08-04

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S160000, C257SE21414, C257SE29117

Reexamination Certificate

active

07569435

ABSTRACT:
A method of making a source-gated transistor is described, in which a gate (4) is provided on substrate (2) followed by gate insulator (6) and semiconductor layer (8). The layer is patterned to align the source with the gate (4) using photoresist (12) and back illumination through the substrate (2) with the gate (4) acting as a mask. The distance between source and drain may also be self-aligned using a spacer technique.

REFERENCES:
patent: 5441905 (1995-08-01), Wu
patent: 5801398 (1998-09-01), Hebiguchi
patent: 2003/0178629 (2003-09-01), Yagi
patent: 2003/0219935 (2003-11-01), Miyairi et al.

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