Transistor including SiON buffer layer

Details Transistor including SiON buffer layer Transistor including SiON buffer layer

2005-02-01

2005-02-01

Booth, Richard A. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S261000

Reexamination Certificate

active

06849897

ABSTRACT:
A thin buffer layer of SiON is formed on the top surface of the floating gate, in order to protect the polysilicon surface from attack by atomic chlorine produced during the formation of the high temperature oxide of the ONO stack. The buffer layer can also be formed on other dielectric surfaces which are otherwise subject to adverse conditions in subsequent processing, such as the nitride layer in the ONO dielectric stack.

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