Transistor including paramagnetic impurities and having...

Details Transistor including paramagnetic impurities and having... Transistor including paramagnetic impurities and having...

2006-06-28

2009-12-01

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S421000, C257SE29323, C977S933000, C977S936000

Reexamination Certificate

active

07626236

ABSTRACT:
A transistor device may comprise a source having a first ferromagnetic contact thereto, a drain having a second ferromagnetic contact thereto, an electrically conductive gate positioned over a channel region separating the source and the drain, and an electrically insulating layer disposed between the gate and the channel region. The first and second ferromagnetic contacts have anti-parallel magnetic orientations relative to each other. The electrically insulating layer includes a number of paramagnetic impurities each having two spin states such that electrons interacting with the paramagnetic impurities cause the paramagnetic impurities to flip between the two spin states.

REFERENCES:
patent: 5654566 (1997-08-01), Johnson
patent: 6069820 (2000-05-01), Inomata et al.
patent: 2004/0061981 (2004-04-01), Covington
patent: 2004/0113188 (2004-06-01), Schmidt et al.
Uchino et al. “Model of a Switching Oxide Trap in Amorphous Silicon Dioxide.” (Aug. 8, 2001) Physical Review B, vol. 64, 08131(R), pp. 1-4.
Xiao, M. et al. Electrical Detection of the Spin Resonance of a Single Electron in a Silicon Field-Effect Transistor, Jul. 22, 2004, pp. 435-439, vol. 430, Nature Publishing Group, US.

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