Transistor having tensile strained channel and system...

Details Transistor having tensile strained channel and system... Transistor having tensile strained channel and system...

2007-03-29

2009-08-04

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

C257S194000, C257S288000, C257SE29193, C257SE29251

Reexamination Certificate

active

07569869

ABSTRACT:
A transistor structure and a system including the transistor structure. The transistor structure comprises: a substrate including a first layer comprising a first crystalline material; a tensile strained channel formed on a surface of the first layer and comprising a second crystalline material having a lattice spacing that is smaller than a lattice spacing of the first crystalline material; a metal gate on the substrate; a pair of sidewall spacers on opposite sides of the metal gate; and a source region and a drain region on opposite sides of the metal gate adjacent a corresponding one of the sidewall spacers.

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