Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2007-04-24
2007-04-24
Lee, Calvin (Department: 2818)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S549000
Reexamination Certificate
active
11122740
ABSTRACT:
By providing an asymmetric design of a halo region and extension regions of a field effect transistor, the transistor performance may significantly be enhanced for a given basic transistor architecture. In particular, a large overlap area may be created at the source side with a steep concentration gradient of the PN junction due to the provision of the halo region, whereas the drain overlap may be significantly reduced or may even completely be avoided, wherein a moderately reduced concentration gradient may further enhance the transistor performance.
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patent: 102 61 307 (2004-07-01), None
patent: WO 2004/040655 (2004-05-01), None
Feudel Thomas
Horstmann Manfred
Lenski Markus
Advanced Micro Devices , Inc.
Lee Calvin
Williams Morgan & Amerson P.C.
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