Transistor gate electrode having conductor material layer

Details Transistor gate electrode having conductor material layer Transistor gate electrode having conductor material layer

2011-01-18

2011-01-18

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C257SE21177

Reexamination Certificate

active

07871916

ABSTRACT:
Various embodiments of the invention relate to a PMOS device having a transistor channel of silicon germanium material on a substrate, a gate dielectric having a dielectric constant greater than that of silicon dioxide on the channel, a gate electrode conductor material having a work function in a range between a valence energy band edge and a conductor energy band edge for silicon on the gate dielectric, and a gate electrode semiconductor material on the gate electrode conductor material.

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