Transistor forming methods

Details Transistor forming methods Transistor forming methods

2009-10-26

2011-10-18

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S151000, C438S163000

Reexamination Certificate

active

08039327

ABSTRACT:
A transistor forming method includes forming a dielectric spacer in a trench surrounding an active area island, forming line openings through the spacer, and forming a gate line extending through the line openings, over opposing sidewalls, and over a top of the fin. Source/drain regions are in the fin. Another method includes forming an interlayer dielectric over areas of the fin intended for source/drain regions, forming contact openings through the interlayer dielectric, and forming a source/drain plug in contact with an exposed portion of the spacer and in electrical connection with the top, one of opposing endwalls, and both of the opposing sidewalls of the fin.

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