Transistor for providing protection from electrostatic discharge

Details Transistor for providing protection from electrostatic discharge Transistor for providing protection from electrostatic discharge

1996-09-26

1998-08-11

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257394, 257496, H01L 2362

Patent

active

057930848

ABSTRACT:
The present invention relates to a transistor for providing protection from electrostatic discharge when a semiconductor device is exposed to electrostatic state, the transistor for providing protection from Electrostatic Discharge(ESD) being characterized by the fact that in case the gate length of a transistor is L, the gate length at the edges of the transistor is longer than the gate length L, and that the gate length is fixed as L and the edge of the transistor, in which the gate is adjacent to the active regions, has a grooved shape with an acute angle, and also the present invention makes the high-intensity electric field alleviated, and also enables the current to flow uniformly over the overall gate, and the heating effect is prevented, resulting in a prolonged life expectancy of the device.

REFERENCES:
patent: H1435 (1995-05-01), Cherne et al.
patent: 3440502 (1969-04-01), Lin et al.
patent: 4791071 (1988-12-01), Ang
patent: 4864380 (1989-09-01), Plus et al.
patent: 5157573 (1992-10-01), Lee et al.
patent: 5381029 (1995-01-01), Eguchi et al.
patent: 5477414 (1995-12-01), Li et al.

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