Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2007-11-14
2010-02-16
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S020000, C257S094000, C257S183000, C257S194000, C257S195000, C257SE29246, C257SE29248, C257SE29249, C257SE29253, C257SE29254
Reexamination Certificate
active
07663161
ABSTRACT:
A transistor includes: a first semiconductor layer and a second semiconductor layer with a first region and a second region, which are sequentially formed above a substrate; a first p-type semiconductor layer formed on a region of the second semiconductor layer other than the first and second regions; and a second p-type semiconductor layer formed on the first p-type semiconductor layer. The first p-type semiconductor layer is separated from a drain electrode by interposing therebetween a first groove having a bottom composed of the first region, and from a source electrode by interposing therebetween a second groove having a bottom composed of the second region.
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Kuroda, M., et al., “Normally-off Operation of Non-polar AIGaN/GaN Heterojunction FETs Grown on R-plane Sapphire”, Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials, 2005, pp. 470-471.
Hikita Masahiro
Kaibara Kazuhiro
Tanaka Tsuyoshi
Ueda Tetsuzo
Uemoto Yasuhiro
McDermott Will & Emery LLP
Panasonic Corporation
Soward Ida M
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