Transistor for non volatile memory devices having a carbon...

Details Transistor for non volatile memory devices having a carbon... Transistor for non volatile memory devices having a carbon...

2008-03-11

2008-03-11

Tran, Minh-Loan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S321000, C257S324000, C257SE29304, C257SE29309

Reexamination Certificate

active

11285763

ABSTRACT:
A transistor is described having a source electrode and a drain electrode. The transistor has at least one semiconducting carbon nanotube that is electrically coupled between the source and drain electrodes. The transistor has a gate electrode and dielectric material containing one or more quantum dots between the carbon nanotube and the gate electrode.

REFERENCES:
patent: 6998634 (2006-02-01), Cheong et al.
patent: 7015500 (2006-03-01), Choi et al.
M.S. Fuhrer, et al. “High-Mobility Nanotube Transistor Memory”, Nano Letters, 2002, vol. 2, No. 7, pp. 755-759, Department of Physics, University of Maryland, College Park, Maryland, May 30, 2002.
M. Radosavljevic, et al., “Nonvolatile Molecular Memory Elements Based On Ambipolar Nanotube Field Effect Transistors”, Nano Letters 2002, vol 2, No. 7, pp. 761-764, Department of Physics and Astronomy Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, Pennsylvania, Jun. 1, 2002.

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