Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-01-04
2011-01-04
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S030000, C438S485000, C257SE29292, C257SE29293, C257SE29294
Reexamination Certificate
active
07863113
ABSTRACT:
A transistor for active matrix display and a method for producing the transistor (1). The transistor (1) includes a microcrystalline silicon film (5) and an insulator (3). The crystalline fraction of the microcrystalline silicon film (5) is above 80%. According to the invention, the transistor (1) includes a plasma treated interface (4) located between the insulator (3) and the microcrystalline silicon film (5) so that the transistor (1) has a linear mobility equal or superior to 1.5 cm2V−1s−1, shows threshold voltage stability and wherein the microcrystalline silicon film (5) includes grains (6) whose size ranges between 10 nm and 400 nm. The invention concerns as well a display unit having a line-column matrix of pixels that are actively addressed, each pixel comprising at least a transistor as described above.
REFERENCES:
patent: 5403756 (1995-04-01), Yoshinouchi et al.
patent: 5686349 (1997-11-01), Nakata
patent: 5796116 (1998-08-01), Nakata et al.
patent: 6017779 (2000-01-01), Miyasaka
patent: 6078059 (2000-06-01), Nakata
patent: 2003/0054586 (2003-03-01), Shtein et al.
Roca et al., “Stable microcrystalline silicon thin-film transistors produced by the layer-by-layer technique”, Journal of Applied Physics, 1999 American Institute of Physics, pp. 7079-7082.
Roca I Cabarrocas P et al: “Stable Microcrystalline Silicon Thin-Film Transistors Produced by the Layer-By-Layer Technique” Journal of Applied Physics, American Institute of Physics. New York, US, vol. 86, No. 12, Dec. 15, 1999, pp. 7079-7082, XP000928312 ISSN: 0021-8979 cited in the application p. 7079.
Young-Bae Park et al: “Effect of Hydrogen Plasma Precleaning on the Removal of Interfacialamorphous Layer in the Chemical Vapor Deposition of Microcrystalline Silicon Films on Silicon Oxide Surface” Applied Physics Letters, American Institute of Physics. New York, US, vol. 68, No. 16, Apr. 15, 1996, pp. 2219-2221, XP000585161 ISSN: 0003-6951 p. 2219.
Drevillon Bernard
Roca I Cabarrocas Pere
Vanderhaghen Régis
Centre National de la Recherche Scientifique
Ecole Polytechnique
Nguyen Ha Tran T
Whalen Daniel
Young & Thompson
LandOfFree
Transistor for active matrix display and a method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Transistor for active matrix display and a method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transistor for active matrix display and a method for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2720204