Transistor fabrication method

Details Transistor fabrication method Transistor fabrication method

2010-01-19

2011-10-04

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S945000

Reexamination Certificate

active

08030199

ABSTRACT:
A method of forming low stack height transistors having controllable linewidth in an integrated circuit without channeling is disclosed. A disposable hardmask of doped glass is utilized to define the gate and subsequently protect the gate (and the underlying substrate) during ion implantation which forms the source and drains. A variety of silicided and non-silicided) structures may be formed.

REFERENCES:
patent: 4267011 (1981-05-01), Shibata et al.
patent: 4415383 (1983-11-01), Naem et al.
patent: 4521448 (1985-06-01), Sasaki
patent: 4690730 (1987-09-01), Tang et al.
patent: 4697333 (1987-10-01), Nakahara
patent: 4818715 (1989-04-01), Chao
patent: 4830974 (1989-05-01), Chang et al.
patent: 5084417 (1992-01-01), Joshi et al.
patent: 5185279 (1993-02-01), Ushiku
patent: 5217923 (1993-06-01), Suguro
patent: 5268317 (1993-12-01), Schwalke et al.
patent: 5395780 (1995-03-01), Hwang
patent: 6214743 (2001-04-01), Oiao et al.
patent: 2008/0280403 (2008-11-01), Chittipeddi et al.
patent: 62-45071 (1987-02-01), None
Wolf, Stanley, Ph.D.; “Silicon Processing for the VLSI ERA—vol. 1—Process Technology”;Lattice Press; p. 184.
Wolf, Stanley, Ph.D.; “Silicon Processing for the VLSI ERA—vol. 2—Process Technology”;Lattice Press; pp. 273-275.

Affiliated with

Also associated with

Rating

Transistor fabrication method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Transistor fabrication method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transistor fabrication method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4275428