Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-04-19
2011-04-19
Quach, Tuan N. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S411000, C257S412000, C257SE29129
Reexamination Certificate
active
07928502
ABSTRACT:
Embodiments of non-volatile semiconductor devices include a substrate having therein a source region and a drain region separated by a channel region extending to a first surface of the substrate, and a multilayered gate structure containing nano-crystals located above the channel region. The gate structure comprises a gate dielectric substantially in contact with the channel region, spaced-apart nano-crystals disposed in the gate dielectric, one or more impurity blocking layers overlying the gate dielectric, and a gate conductor layer overlying the one more impurity blocking layers. The blocking layer nearest the gate conductor can be used to adjust the threshold voltage of the device and/or retard dopant out-diffusion from the gate conductor layer.
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Liu Chun-Li
Merchant Tushar P.
Orlowski Marius K.
Stoker Matthew W.
Freescale Semiconductor Inc.
Ingrassia Fisher & Lorenz P.C.
Quach Tuan N.
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