Transistor device with increased breakdown voltage

Details Transistor device with increased breakdown voltage Transistor device with increased breakdown voltage

1994-02-23

1996-02-20

Limanek, obert P.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Lateral bipolar transistor structure

257587, 257588, H01L 27082, H01L 2943

Patent

active

054931495

ABSTRACT:
A bipolar lateral device is disclosed having a high BV.sub.ceo. The device is formed according to a single polysilicon process. In one embodiment silicide is excluded from the surface of the N+ doped polysilicon protecting the N- base width region of the device and the resulting device has a BV.sub.ceo of 8 to 10 V. In another embodiment, the silicide is excluded from the surface of the polysilicon protecting the n-base width region and the polysilicon is maintained as intrinsic polysilicon. The resulting device has a BV.sub.ceo of about 20 V. The devices are useful as voltage clamping devices in programmable logic circuits which must withstand a collector to emitter reverse bias voltage that is sufficient to program either vertical fuse or lateral fuse devices.

REFERENCES:
patent: 4669177 (1987-06-01), D'Arrigo et al.
patent: 4753709 (1988-06-01), Welch et al.
patent: 5107320 (1992-04-01), Iranmanesh

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