Transistor device having asymmetric embedded strain elements...

Details Transistor device having asymmetric embedded strain elements... Transistor device having asymmetric embedded strain elements...

2011-05-10

2011-05-10

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

C257S194000, C257S018000, C257S255000, C257SE29246, C257SE21403, C438S285000, C438S286000

Reexamination Certificate

active

07939852

ABSTRACT:
Semiconductor transistor devices and related fabrication methods are provided. An exemplary transistor device includes a layer of semiconductor material having a channel region defined therein and a gate structure overlying the channel region. Recesses are formed in the layer of semiconductor material adjacent to the channel region, such that the recesses extend asymmetrically toward the channel region. The transistor device also includes stress-inducing semiconductor material formed in the recesses. The asymmetric profile of the stress-inducing semiconductor material enhances carrier mobility in a manner that does not exacerbate the short channel effect.

REFERENCES:
patent: 5036017 (1991-07-01), Noda
patent: 2007/0253239 (2007-11-01), Wang et al.
patent: 2009/0124056 (2009-05-01), Chen et al.
patent: 2009/0263949 (2009-10-01), Anderson et al.

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