Transistor design self-aligned to contact

Details Transistor design self-aligned to contact Transistor design self-aligned to contact

2005-09-14

2008-09-30

Malsawma, Lex (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S618000, C438S279000

Reexamination Certificate

active

07429524

ABSTRACT:
The present invention provides a method of manufacturing a transistor device, a transistor device, and a method for manufacturing an integrated circuit. In one aspect, the method of manufacturing a transistor device includes providing a gate structure (140) over a substrate (110). An insulating layer (310) is formed over the gate structure (140), and openings (710) to the substrate (110) are formed therein, thereby removing a portion of the gate structure (140). The openings (710) are filled with a conductor (1410), thereby forming an interconnect (1510).

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