Transistor circuit formation substrate

Details Transistor circuit formation substrate Transistor circuit formation substrate

2011-08-02

2011-08-02

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Configuration or pattern of bonds

C257S506000, C257S508000, C257S040000, C257SE51002, C257SE25008, C438S129000, C438S099000

Reexamination Certificate

active

07989963

ABSTRACT:
A specially designed mask controls the arrangement of conductive materials that form a source and drain of a transistor. Designing the mask can be costly and time-consuming, which means that the testing of a circuit involving a transistor can also be costly, time consuming and a barrier towards efficient circuit development and testing. Accordingly, the present invention provides a pre-fabricated, general-purpose pattern comprising an array of conductive islands. The pattern is used as a source and a drain terminal for the formation of a thin-film transistor and as a conductive source for the formation of other electrical components upon the array.

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