Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-20
2007-02-20
Andujar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S040000, C257S072000, C257S258000
Reexamination Certificate
active
11049974
ABSTRACT:
A transistor having at least one of a source electrode and a drain electrode being formed of a porous film is described. The transistor maintains its characteristics even after being subjected to a high temperature and high humidity environment. The transistor may be used in a circuit board, a display and electronic equipment.
REFERENCES:
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patent: 6150191 (2000-11-01), Bao
patent: 6885146 (2005-04-01), Yamazaki et al.
patent: 2003/0076649 (2003-04-01), Speakman
patent: 2003-0074472 (2003-03-01), None
patent: WO 01/047043 (2001-06-01), None
patent: WO 01/047045 (2001-06-01), None
Qiu et al., “H2O effect on the stability of organic thin-film field-effect transistors,” Applied Physics Letters, vol. 83, No. 8, pp. 1644-1646, Aug. 25, 2003.
Harada Mitsuaki
Kawase Takeo
Moriya Soichi
Andujar Leonardo
Seiko Epson Corporation
Tran Tan
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