Semiconductor device manufacturing: process – Chemical etching – Altering etchability of substrate region by compositional or...
Reexamination Certificate
2006-01-09
2009-08-25
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Altering etchability of substrate region by compositional or...
C438S156000, C438S173000, C438S269000, C438S272000, C257SE21643, C977S938000
Reexamination Certificate
active
07579281
ABSTRACT:
A transistor assembly with semiconductor material vertically introduced into micro holes (4) in a pliable a film laminate consisting of two plastic films (1, 3) with a metal layer (2) located therebetween. Said semiconductor material is provided with contacts (6, 7) by metalizing the top side and bottom side of the film laminate. The assembly is very strong by virtue of the fact that the film can be bent and stretched.
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Chen Jie
Koenenkamp Rolf
Darby & Darby
Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH
Maldonado Julio J
Smith Matthew
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