Transistor arrangement for forming basic cell of master-slice ty

Details Transistor arrangement for forming basic cell of master-slice ty Transistor arrangement for forming basic cell of master-slice ty

1994-12-28

1995-07-25

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257204, 257207, 257401, 257909, H01L 2702, H01L 2710

Patent

active

054364850

ABSTRACT:
A master-slice type semiconductor integrated circuit device includes a first transistor, and a second transistor. The first and second transistors are arranged side by side in a first direction. The first and second transistors respectively have first and second gate electrodes extending in a second direction perpendicular to the first direction. The first gate electrode has a first portion in which two gate contacts arranged in the first direction can be made. The second gate electrode has a second portion in which two gate contacts arranged in the first direction can be made.

REFERENCES:
The Proceedings of the 1st International Conference on Semi-Custom IC's Nov. 1981, London GB; pp. 65-74.

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