Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
Patent
1998-03-13
2000-03-14
Tran, Minh Loan
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material with...
257 66, 257255, 257627, 257628, H01L 2904
Patent
active
060376104
ABSTRACT:
A semiconductor device having high carrier mobility, which comprises a substrate provided thereon a base film and further thereon a crystalline non-single crystal silicon film by crystal growth, wherein, the crystals are grown along the crystallographic [110] axis, and source/drain regions are provided approximately along the direction of carrier movement which coincides to the direction of crystal growth. Moreover, the electric conductivity along this direction of crystal growth is higher than any in other directions.
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Miyanaga Akiharu
Ohtani Hisashi
Takayama Toru
Takemura Yasuhiko
Zhang Hongyong
Robinson Eric J.
Semiconductor Energy Laboratory Co,. Ltd.
Tran Minh Loan
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