Transistor and semiconductor device

Details Transistor and semiconductor device Transistor and semiconductor device

1996-01-30

1998-10-06

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

With current flow along specified crystal axis

257 64, 257627, 257628, H01L 2904, H01L 31036

Patent

active

058180761

ABSTRACT:
A semiconductor device having high carrier mobility, which comprises a substrate provided thereon a base film and further thereon a crystalline non-single crystal silicon film by crystal growth, wherein, the crystals are provided approximately along the direction of carrier movement which coincides to the direction of crystal growth. Moreover, the electric conductivity along this direction of crystal growth is higher than any in other directions.

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patent: 5147826 (1992-09-01), Liu et al.
patent: 5177578 (1993-01-01), Kakiuoki
patent: 5275851 (1994-01-01), Fonash et al.
patent: 5326991 (1994-07-01), Takasu
C. Hayzelden et al., "In Situ Transmission Electron Microscopy Studies of Silicide-Mediated Crystallization of Amorphous Silicon" (3 pages).
A.V. Dvurechenskii et al., "Transport Phenomena in Amorphous Silicon Doped by Ion Implantation of 3d Metals", Akademikian Lavrentev Prospekt 13, 630090 Novosibirsk 90, USSR, pp. 635-640.
T. Hempel et al., "Needle-Like Crystallization of Ni Doped Amorphous Silicon Thin Films", Solid State Communications, vol. 85, No. 11, pp. 921-924, 1993.

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