Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1995-05-24
1998-06-30
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257347, H01L 2976, H01L 2701
Patent
active
057738467
ABSTRACT:
A thin film transistor, which comprises crystallizing an amorphous silicon film, forming thereon a gate insulating film and a gate electrode, implanting impurities in a self-aligned manner, adhering a coating containing a catalyst element which accelerates the crystallization of the silicon film, and annealing the resulting structure at a temperature lower than the deformation temperature of the substrate to activate the doped impurities. Otherwise, the catalyst element can be incorporated into the structure by introducing it into the impurity region by means of ion implantation and the like. Also, a thin film transistor, which comprises forming a gate electrode, a gate insulating film, and an amorphous silicon film on a substrate, implanting impurities into the amorphous silicon film to form source and drain regions as the impurity regions, introducing a catalyst element into the impurity region by adhering a coating containing the catalyst element of by means of ion doping and the like, and annealing the resulting structure at a temperature lower than the deformation temperature of the substrate to activate the doped impurities.
REFERENCES:
patent: 4746628 (1988-05-01), Takafuji et al.
patent: 4943837 (1990-07-01), Konishi et al.
patent: 5124769 (1992-06-01), Tanaka et al.
patent: 5147826 (1992-09-01), Liu et al.
patent: 5266507 (1993-11-01), Wu
patent: 5275851 (1994-01-01), Fonash et al.
"Crystallized Si Films by Low-Temperature Rapid Thermal Annealing of Amorphous Silicon", R. Kakkad, J. Smith, W.S. Lau, S.J. Fonash, J. Appl. Phys. 65 (5), Mar. 1, 1989, 1989 American Institute of Physics, pp. 2069-2072.
"Polycrystalline Silicon Thin Film Transistors on Corning 7059 Glass Substrates Using Short Time, Low Temperature Processing", G. Liu, S.J. Fonash, Appl. Phys. Lett. 62 (20), May 17, 1993, 1993 American Institute of Physics, pp. 2554-2556.
"Selective Area Crystallization of Amorphous Silicon Films by Low-Temperature Rapid Thermal Annealing", Gang Liu and S.J. Fonash, Appl. Phys. Lett. 55 (7), Aug. 14, 1989, 1989 American Institute of Physics, pp. 660-662.
"Low Temperature Selective Crystallization of Amorphous Silicon", R. Kakkad, G. Liu, S.J. Fonash, Journal of Non-Crystalline Solids, vol. 115, (1989), pp. 66-68.
Takayama Toru
Takemura Yasuhiko
Zhang Hongyong
Costellia Jeffrey L.
Ferguson Jr. Gerald J.
Loke Steven H.
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Transistor and process for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Transistor and process for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transistor and process for fabricating the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1862630