Transistor and method of forming the same

Details Transistor and method of forming the same Transistor and method of forming the same

1997-07-10

1999-08-31

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438166, 438229, 257 57, 257 64, 257 65, H01L 2100, H01L 2184

Patent

active

059465603

ABSTRACT:
A crystalline silicon thin film transistor having an LDD (lightly doped drain) structure and a process for fabricating the same, which comprises introducing a catalyst element for accelerating crystallization at a concentration of 1.times.10.sup.15 cm.sup.-3 or more but less than 2.times.10.sup.19 cm.sup.-3 to the impurity region in an amorphous silicon film, crystallizing the amorphous film thereafter, and after forming gate electrode and gate insulating film, implanting an impurity in a self-aligned manner to establish an LDD structure.

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