Transistor and method of fabricating the same

Details Transistor and method of fabricating the same Transistor and method of fabricating the same

2007-01-30

2007-01-30

Tran, Thien F. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S466000, C257S496000, C257S586000

Reexamination Certificate

active

10977036

ABSTRACT:
A transistor and a method of fabricating the same: The transistor includes an isolation layer disposed in a semiconductor substrate to define an active region. A pair of source/drain regions is disposed in the active region, spaced apart from each other. A channel region is interposed between the pair of the source/drain regions. The active region has a mesa disposed across the channel region. The mesa extends to the source/drain regions. A gate electrode is disposed to cross the active region along the direction across the mesa.

REFERENCES:
patent: 5753951 (1998-05-01), Geissler
patent: 6548859 (2003-04-01), Maegawa
patent: 6583025 (2003-06-01), Hong
patent: 2002/0053711 (2002-05-01), Chau et al.
patent: 2003/0085434 (2003-05-01), Yoshida et al.
patent: 60-261171 (1985-12-01), None
patent: 1994-0001450 (1994-01-01), None
English language abstract of Korean Publication No. 1994-0001450.
English language abstract of Japanese Publication No. 60-261171.

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