Transistor and its method of manufacture

Details Transistor and its method of manufacture Transistor and its method of manufacture

2007-08-01

2009-06-23

Smith, Matthew (Department: 4136)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

C257S009000, C257SE51040, C438S268000

Reexamination Certificate

active

07550791

ABSTRACT:
An embodiment includes a transistor and a method of manufacturing the transistor that includes carbon nano-tubes. The physical behavior of the carbon nano-tubes, particularly a bending action that alters a normally linear configuration, is affected by elements of the transistor, such as a space between the carbon nano-tube and a conductor. The space is formed by removing a spacer. A dimension of the spacer between the carbon nano-tube and the conductor is efficiently controlled by adjusting its width. An operation voltage of the transistor relates to the physical behavior of the carbon nano-tubes, and thus to the dimensions of the spacer.

REFERENCES:
patent: 2005/0095780 (2005-05-01), Gutsche et al.
patent: 2006/0249726 (2006-11-01), Choi et al.
patent: 1804286 (2007-04-01), None
patent: 1804286 (2007-07-01), None
patent: 2004-103802 (2004-04-01), None
patent: 2002-0001260 (2002-01-01), None
patent: 10-2004-0043043 (2004-05-01), None
English language abstract of Korean Publication No. 2002-0001260.
English language abstract of Japanese Publiction No. 2004-103802.
English language abstract of Korean Publication No. 10-2004-0043043.

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