Transistor and in-situ fabrication process

Details Transistor and in-situ fabrication process Transistor and in-situ fabrication process

2008-12-09

2010-11-02

Landau, Matthew C (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29295

Reexamination Certificate

active

07825470

ABSTRACT:
A method of fabricating semiconductor components in-situ and in a continuous integrated sequence includes the steps of providing a single crystal semiconductor substrate, epitaxially growing a first layer of rare earth insulator material on the semiconductor substrate, epitaxially growing a first layer of semiconductor material on the first layer of rare earth insulator material, epitaxially growing a second layer of rare earth insulator material on the first layer of semiconductor material, and epitaxially growing a second layer of semiconductor material on the second layer of rare earth insulator material. The first layer of rare earth insulator material, the first layer of semiconductor material, the second layer of rare earth insulator material, and the second layer of semiconductor material form an in-situ grown structure of overlying layers. The in-situ grown structure is etched to define a semiconductor component and electrical contacts are deposited on the semiconductor component.

REFERENCES:
patent: 4479297 (1984-10-01), Mizutani et al.
patent: 2003/0183885 (2003-10-01), Nishikawa et al.
K N. Tu, et al. “Low Schottky barrier of rare-earth silicide on n-Si”, Appl. Phys. Lett. 38, pp. 626-628 (1981).

Affiliated with

Also associated with

Rating

Transistor and in-situ fabrication process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Transistor and in-situ fabrication process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transistor and in-situ fabrication process will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4235088