Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-09-09
2010-11-30
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S060000, C257S215000, C257S288000, C257S291000, C257S317000, C257S319000, C257S072000, C257S347000, C257S128000, C257SE29117, C257SE29120, C257SE29122, C257SE29273, C349S043000, C349S046000
Reexamination Certificate
active
07842951
ABSTRACT:
A transistor includes a control electrode, a first current electrode and a second current electrode. The control electrode includes a body portion, and first and second hand portions protruded from first and second ends of the body portion, respectively. The first current electrode is electrically insulated from the control electrode and disposed over a region between the first and second hand portions of the control electrode. A portion of the first current electrode is overlapped with a portion of the control electrode. The second current electrode is electrically insulated from the control electrode and partially overlapped with the body portion, the first hand portion and the second hand portion of the control electrode. Therefore, parasitic capacitance is reduced.
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Kang Nam-Soo
Lee Back-Won
Lee Yong-Soon
Moon Seung-Hwan
Park Haeng-Won
Cantor & Colburn LLP
Lopez Fei Fei Yeung
Mandala Victor A
Samsung Electronics Co,. Ltd.
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