Transistor

Details Transistor Transistor

2007-09-24

2010-12-14

Gurley, Lynne A (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S267000, C257SE27068, C257SE21047

Reexamination Certificate

active

07851831

ABSTRACT:
A transistor includes a nitride semiconductor layer and a gate electrode layer. The gate electrode layer includes a tantalum nitride layer on the nitride semiconductor layer. The tantalum nitride layer forms a Schottky junction with the nitride semiconductor layer. The transistor also includes an insulating film on the nitride semiconductor layer. The insulating film surrounds the gate electrode layer. A first portion of the gate electrode layer, in contact with the nitride semiconductor layer, has a higher nitrogen mole fraction than a second portion of the gate electrode layer.

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