Transistor

Details Transistor Transistor

2006-03-28

2006-03-28

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000

Reexamination Certificate

active

07019357

ABSTRACT:
A field effect transistor is provided in which a drain current is not influenced by fluctuation of a gate voltage. In order to set the transistor in an on state (conductive state), a voltage equal to or more than a threshold voltage is applied to an inversion layer formation region (19) via a gate electrode (12) to thereby form an inversion layer. Charge inducted by the inversion layer moves to a channel region (18) and make the Fermi level of the channel region (18) fluctuate, and then, a potential barrier between a source region (16) and the channel region (18) is lowered. As a result, carriers can climb over the barrier and move from the source region (16) to a drain region (17), and thus, a drain current flows.

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