Transient over-voltage clamp

Details Transient over-voltage clamp Transient over-voltage clamp

2009-06-29

2011-10-25

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29257, C257S500000

Reexamination Certificate

active

08044457

ABSTRACT:
In various embodiments, the invention relates to semiconductor structures, such as planar MOS structures, suitable as voltage clamp devices. Additional doped regions formed in the structures may improve over-voltage protection characteristics.

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Anderson et al., ESD Protection under Wire Bonding Pads, EOS/ESD Symposium 99-88, pp. 2A.4.1-2A.4.7.
International Search Report and Written Opinion, dated Mar. 25, 2011, in PCT Appl. No. PCT/US2011/020036, filed Jan. 3, 2011.

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