Transfer of a thin layer from a wafer comprising a buffer layer

Details Transfer of a thin layer from a wafer comprising a buffer layer Transfer of a thin layer from a wafer comprising a buffer layer

2006-03-28

2006-03-28

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S149000, C438S933000

Reexamination Certificate

active

07018910

ABSTRACT:
A process for producing a structure of a thin layer of semiconductor material obtained from a composite structure donor wafer. The donor wafer includes a lattice parameter matching layer of a matching substrate that advantageously has an upper layer of semiconductor material having a first lattice parameter. A film of semiconductor material having a second, nominal, lattice parameter that is substantially different from the first lattice parameter is strained by the matching layer. A region of weakness is created in the matching substrate to facilitate splitting. A relaxed layer has a nominal lattice parameter that is substantially identical to the first lattice parameter. The relaxed layer is transferred to a receiving substrate. A number of different wafers can be made by this process.

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