Transfer method for non-critical photoresist patterns

Details Transfer method for non-critical photoresist patterns Transfer method for non-critical photoresist patterns

1996-12-02

1998-08-04

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

G03F 900

Patent

active

057891176

ABSTRACT:
A method of direct transfer printing of a photoresist pattern layer onto the first pattern layer of a phase shift photomask reticle is described which allows completion of the photomask pattern at a much lower cost than the conventional multiple-pass photolithographic process. The direct transfer of the resist pattern from printing plate to mask surface by means of a platen is especially suitable for non-critical regions such as border regions, seal bands, identification marks, and the like.

REFERENCES:
patent: 5429897 (1995-07-01), Yoshioka et al.
patent: 5482799 (1996-01-01), Isao et al.
patent: 5506080 (1996-04-01), Adair et al.
patent: 5514498 (1996-05-01), Nakagawa
patent: 5556724 (1996-09-01), Tarumoto et al.

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