Total internal reflection (TIR) CMOS imager

Details Total internal reflection (TIR) CMOS imager Total internal reflection (TIR) CMOS imager

2006-02-21

2006-02-21

Kang, Donghee (Department: 2811)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S048000, C438S065000, C438S069000, C438S070000, C257S432000, C257S436000

Reexamination Certificate

active

07001795

ABSTRACT:
The subject invention is directed to use of photoconductors as conductors of light to photo diodes in a CMOS chip, wherein said photoconductors are separated by at least one low refractive index material (i.e. air). The present invention offers advantages over previous CMOS imaging technology, including enhanced light transmission to photo diodes. The instant methods for producing a CMOS imaging device and CMOS imager system involve minimal power loss. Since no lens is required, the invention eliminates concerns about radius limitation and about damaging lenses during die attach, backgrind, and mount. The invention also provides little or no cross talk between photo diodes.

REFERENCES:
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patent: 6271900 (2001-08-01), Li
patent: 2002/0122209 (2002-09-01), Yoshida
patent: 2003/0136759 (2003-07-01), Mikolas
patent: 2004/0082094 (2004-04-01), Yamamoto
Reed, et al., “Fabrication of microchannels using polycarbonates as sacrificial materials”, J. Micromech. Microeng. 11: 733-737 (2001).
Bhusari et al., “Fabrication of Air-Channel Structures for Microfluidic, Microelectromechanical, and Microelectronic Applications,” J. Microelectr. Systems 10(3): 400-408, (2001).

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