Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1982-06-30
1985-03-05
Powell, William A.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
29576W, 29580, 148187, 156646, 156648, 156652, 156653, 156657, 156662, 204192E, 357 50, 427 93, H01L 21306, H01L 2704, B44C 122, C03C 1500
Patent
active
045029130
ABSTRACT:
A fully isolated dielectric structure for isolating regions of monocrystalline silicon from one another and method for making such structure are described. The structure uses a combination of recessed oxide isolation with pairs of parallel, anisotropic etched trenches which are subsequently oxidized and filled to give complete dielectric isolation for regions of monocrystalline silicon. The anisotropic etching preferably etches a buried N+ sublayer under the monocrystalline silicon region and then the trench structure is thermally oxidized to consume the remaining N+ layer under the monocrystalline region and to fully isolate the monocrystalline silicon region between pairs of such trenches.
REFERENCES:
patent: 3419956 (1969-01-01), Kren et al.
patent: 3575740 (1971-04-01), Castrucck et al.
patent: 3966577 (1976-06-01), Hochberg
patent: 4104086 (1978-08-01), Bondur et al.
patent: 4104090 (1978-08-01), Pogge
patent: 4196440 (1980-04-01), Anantha et al.
Lechaton John S.
Malaviya Shashi D.
Schepis Dominic J.
Srinivasan Gurumakonda R.
International Business Machines - Corporation
Powell William A.
Saile George O.
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