Semiconductor device manufacturing: process – With measuring or testing – Optical characteristic sensed
Reexamination Certificate
2008-04-08
2008-04-08
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
With measuring or testing
Optical characteristic sensed
C438S781000, C438S323000, C438S790000
Reexamination Certificate
active
11276707
ABSTRACT:
Methods for applying topographically compensated film in a semiconductor wafer fabrication process are disclosed. The processes include premapping a surface of a wafer so as to determine the local topography (e.g., z-height) of the wafer and then applying a variable depth of a film to the wafer, such that the variable depth is modulated based on the local topography of the wafer. The resultant topography of the applied film and wafer is substantially planar (e.g., within approximately 100 nm) across the wafer.
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Brodsky Colin J.
Bukofsky Scott J.
Gabor Allen H.
Cai Yuanmin
Green Telly D
Smith Zandra V.
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