Topographical selective patterns

Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...

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216 66, 216 67, 216 94, 156345LT, 156345B, 156345P, 427533, 427537, 427536, 427555, 438694, 438710, 438712, 438733, B05D 300

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058303766

ABSTRACT:
A maskless process generates a patterned coating on a polymeric substrate, wherein the pattern is at least partially defined by the substrate topography. The process uses a high intensity/high fluence energy source to strike a coated substrate, thus selectively removing a portion of the coating. The amount and area of the coating removed is dependent on the substrate topography and the applied energy, and this forms a pattern of residual coating material on the substrate.

REFERENCES:
patent: 3860783 (1975-01-01), Schmidt et al.
patent: 3873371 (1975-03-01), Wolf
patent: 3904462 (1975-09-01), Dimigen et al.
patent: 4016062 (1977-04-01), Mehta et al.
patent: 4097618 (1978-06-01), Poliniak
patent: 4126712 (1978-11-01), Poliniak et al.
patent: 4289381 (1981-09-01), Garvin et al.
patent: 4388517 (1983-06-01), Schulte et al.
patent: 4414059 (1983-11-01), Blum et al.
patent: 4465551 (1984-08-01), Horwitz
patent: 4684437 (1987-08-01), Donelon et al.
patent: 4756793 (1988-07-01), Peek
patent: 4761394 (1988-08-01), Conrad
patent: 4764394 (1988-08-01), Conrad
patent: 4822451 (1989-04-01), Ouderkirk et al.
patent: 4863549 (1989-09-01), Grunwald
patent: 4891118 (1990-01-01), Ooiwa et al.
patent: 4918031 (1990-04-01), Flamm et al.
patent: 5091626 (1992-02-01), Lewis et al.
patent: 5139967 (1992-08-01), Sandhu et al.
patent: 5145555 (1992-09-01), Yamamoto
patent: 5264383 (1993-11-01), Young
patent: 5350499 (1994-09-01), Shibaike et al.
"Comparative Status of Pulsed Ion Implantation", J. Gyulai and I. Krafcsik, 1989 No Month.
"Patterning Techniques for Roll Coated Films", R. W. Phillips, D. Todd, and T. Markantes, 1989 No Month.
"Excimer Laser Thin Metallic Film Patterning On Polyvinyledene Difluoride", M. Gauthier, R. Bourret et al., Mat. Res. Soc. Symp. Proc., vol. 129, 1989 No Month.
Database Inspec, Institue of Electrical Engineers, Stevenage, GB Inspec. No. 1390211, H. Gokan et al., Pattern Fabrication by Oblique Incedent Ion-Beam Etching, abstract. No Date.
Materials Research Society Symposium Proceedings, vol. 129, 1989, Pittsburgh, U.S., pp. 399-404, M. Gauthier et al., Excimer Laser Thin Metallic Film Patterning on Polyvinyledene Difluoride. No Month.
Database Inspec, Institute of Electrical Engineers, Stevenage, GB Inspec. No. 1390211, H. Gokan et al., Pattern Fabrication by Oblique Incedent Ion-Beam Etching, abstract. No. Date.
"Comparative Status of Plused Ion Implantation", J. Gyulai and I. Krafcsik, 1989 pp. 275-279, Nuclear Instruments & Methods in Physics Research, B37/38 No Month.
"Excimer Laser Thin Film Patterning On Polyvinyledene Difluoride", M. Gauthier, R. Bourret et al., Mat. Res. Soc. Symp. Proc., vol. 129, 1989 No Month.

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