Top view TEM sample preparation method

Details Top view TEM sample preparation method Top view TEM sample preparation method

1998-05-15

1999-08-10

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438693, 438704, 438706, H01L 21304

Patent

active

059358700

ABSTRACT:
A method for preparing a sample for TEM is described. The method is particularly well suited for examining the active region of an FET. After removing the various layers present above the active region, the polysilicon gate is exposed and then selectively removed. In a key feature of the invention, care is taken to ensure that the regions of field oxide on either side of the active region are left fully intact. After using a laser to mark the area of interest for later ease of identifcation, the silicon is etched down to a few thousand Angstroms, followed by ion milling to further reduce the thickness over the area of interest. Because of the support provided by the field oxide, very thin layers can be exposed without the danger of them pulling away from the silicon.

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