Top via pattern for bond pad structure

Details Top via pattern for bond pad structure Top via pattern for bond pad structure

2005-03-17

2008-01-29

Coleman, W. David (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257SE29119, C257SE23011, C257SE21577, C257SE23145, C438S637000, C438S672000

Reexamination Certificate

active

07323784

ABSTRACT:
Top via pattern for a bond pad structure has at least one first via group and at least one second via group adjacent to each other. The first via group has at least two line vias extending in a first direction. The second via group has at least two line vias extending in a second direction different from said first direction. The line via of the first via group does not cross the line via of the second via group.

REFERENCES:
patent: 6163074 (2000-12-01), Lee et al.
patent: 6306750 (2001-10-01), Huang et al.
patent: 6552435 (2003-04-01), Noble
patent: 6822329 (2004-11-01), Varrot et al.
patent: 2001/0009802 (2001-07-01), Lee
patent: 2004/0021227 (2004-02-01), Watanabe
patent: 2001-261199 (2001-09-01), None
patent: 2002-134509 (2002-05-01), None

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