Semiconductor device manufacturing: process – Repair or restoration
Patent
1997-10-31
2000-04-11
Graybill, David E.
Semiconductor device manufacturing: process
Repair or restoration
438115, 438662, 438906, 438940, H01L 2100, H01L 2144
Patent
active
060487410
ABSTRACT:
A device repair process that includes removing a passivation polyimide layer. The passivation polyimide layer is removed using a first-half ash followed by a second-half ash. The device is rotated during the second-half ash. The device is then cleaned using sodium hydroxide (NaOH) and a subsequent light ash step is implemented. After the passivation polyimide layer is removed, a seed layer is deposited on the device. A photoresist is formed on the seed layer and bond sites are formed in the photoresist. Repair metallurgy is plated through the bond sites. The bond sites are plated by coupling the device to a fixture and applying the current for plating to the fixture. The contact between the device and the fixture is made though bottom surface metallurgy. After plating, the residual seed layer is removed and a laser delete process is implemented to disconnect and isolate the nets of the device.
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Desai Kamalesh S.
Franklin Peter A.
Kaja Suryanarayana
Kelly Kimberley A.
Lee Yeeling L.
Graybill David E.
International Business Machines - Corporation
Townsend Tiffany L.
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