Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2008-07-25
2010-02-23
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C257SE33064
Reexamination Certificate
active
07666693
ABSTRACT:
Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ohmic contact layer includes one or more stacked structures, each including a modified metal layer and a transparent conductive thin film layer, which are repetitively stacked on the p-type clad layer. The modified metal layer is formed of an Ag-based material.
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Hong Woong-ki
Kwak Joon-seop
Seong Tae-yeon
Song June-o
Cantor & Colburn LLP
Garber Charles D
Gwangju Institute of Science and Technology
Isaac Stanetta D
Samsung Electronics Co,. Ltd.
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