Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2004-12-15
2008-08-26
Keith, Jack W (Department: 3663)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S102000, C257S745000, C257S750000, C257S751000, C257S753000
Reexamination Certificate
active
07417264
ABSTRACT:
Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ohmic contact layer includes one or more stacked structures, each including a modified metal layer and a transparent conductive thin film layer, which are repetitively stacked on the p-type clad layer. The modified metal layer is formed of an Ag-based material.
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Hong Woong-ki
Kwak Joon-seop
Seong Tae-yeon
Song June-o
Buchanan & Ingersoll & Rooney PC
Diacou Ari M
Gwangju Institute of Science and Technology
Keith Jack W
Samsung Electronics Co,. Ltd.
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