Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-11-07
2006-11-07
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S611000, C438S612000, C438S613000, C438S508000, C438S508000
Reexamination Certificate
active
07132359
ABSTRACT:
Disclosed are wirebonding methods wherein bondwires are positioned using dynamically determined variations in die placement. Preferred methods of the invention include steps for placing a die on the prepared substrate using selected ideal placement coordinates. Deviation of the actual die placement from the selected ideal placement coordinates is monitored, and one ore more critical bondwires are wirebonded between respective die pins and pins on the substrate. The monitored placement deviation is used to dynamically position the critical bondwires on the critical pins according to actual die placement. Disclosed embodiments include methods using lateral deviation monitoring and angular deviation monitoring to dynamically position bondwires.
REFERENCES:
patent: 6225143 (2001-05-01), Rao et al.
Howard Gregory Eric
Yanduru Naveen
Le Dung A.
Tung Yingsheng
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